The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Sep. 05, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Tatsuro Saito, Yokkaichi Mie, JP;
Makoto Wada, Yokkaichi Mie, JP;
Atsunobu Isobayashi, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Tadashi Sakai, Yokohama Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01L 21/76876 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract
According to one embodiment, there is provided a semiconductor device using graphene, includes a catalyst layer formed on or in a substrate along with an interconnect pattern and a graphene layer formed on the catalyst layer. The graphene layer is arranged parallel to a narrower linewidth than the width of the interconnect pattern.