The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Nov. 06, 2012
Applicant:
Ps4 Luxco S.a.r.l., Luxembourg, LU;
Inventor:
Katsuhiko Tanaka, Tokyo, JP;
Assignee:
PS4 LUXCO S.A.R.L., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 23/5226 (2013.01); H01L 21/2855 (2013.01); H01L 21/76843 (2013.01);
Abstract
In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.
Tanaka, Katsuhiko. (2015). Semiconductor device and manufacturing method thereof (U.S. Patent No. 9076793). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9076793
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile