The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jan. 28, 2014
SK Hynix Inc., Icheon-si, KR;
Seoul National University R&db Foundation, Seoul, KR;
Jong Ho Lee, Seoul, KR;
Kyung Do Kim, Seoul, KR;
SK HYNIX INC., Icheon, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
A semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a P-type region, on at least one main surface of which integrated circuits are formed; one or more via electrodes inserted into the P-type region of the semiconductor substrate; a dielectric layer formed between the semiconductor substrate and the via electrodes; an N-type region, which is formed in the semiconductor substrate to contact a portion of the dielectric layer and to expose other portion of the dielectric layer; and a power circuit, which is electrically connected to the N-type region and apply a bias voltage or a ground voltage thereto, such that electric signals flowing in the via electrodes form an inversion layer on a surface of the semiconductor substrate facing the exposed portion of the dielectric layer.