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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9076768 B1

PDFFull Text
Date of Patent:
Jul. 07, 2015

Filed:

May. 16, 2012

Systems and methods for producing low work function electrodes

Applicants:

Bernard Kippelen, Decatur, GA (US);

Canek Fuentes-hernandez, Atlanta, GA (US);

Yinhua Zhou, Atlanta, GA (US);

Antoine Kahn, Princeton, NJ (US);

Jens Meyer, Princeton, NJ (US);

Jae Won Shim, Atlanta, GA (US);

Seth R. Marder, Atlanta, GA (US);

Inventors:

Bernard Kippelen, Decatur, GA (US);

Canek Fuentes-Hernandez, Atlanta, GA (US);

Yinhua Zhou, Atlanta, GA (US);

Antoine Kahn, Princeton, NJ (US);

Jens Meyer, Princeton, NJ (US);

Jae Won Shim, Atlanta, GA (US);

Seth R. Marder, Atlanta, GA (US);

Assignees:

GEORGIA TECH RESEARCH CORPORATION, Atlanta, GA (US);

THE TRUSTEES OF PRINCETON UNIVERSITY, Princeton, NJ (US);

Attorneys:

Troutman Sanders LLP

Ryan A. Schnider

Mark Lehi Jones

Primary Examiner:

Michele Fan

Int. Cl.
CPC ...
H01L 21/441 (2006.01); H01L 51/00 (2006.01); H01L 29/45 (2006.01); H01L 51/52 (2006.01); H01B 1/24 (2006.01); H01L 51/50 (2006.01); H01L 21/283 (2006.01); H01L 51/10 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 51/5221 (2013.01); H01B 1/24 (2013.01); H01L 51/0036 (2013.01); H01L 51/5092 (2013.01); H01L 51/5234 (2013.01); H01L 2251/308 (2013.01); H01L 21/283 (2013.01); H01L 51/0037 (2013.01); H01L 51/105 (2013.01); H01L 51/445 (2013.01);
Abstract

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.

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