Semiconductor device, semiconductor device unit, active matrix substrate, liquid crystal panel, and liquid crystal display

Abstract

A semiconductor device () provided with at least a plurality of transistors and bootstrap capacitors (Caand Cb), the semiconductor device () includes: a semiconductor layer () made of the same material as a channel layer of each of the transistors; a capacitor electrode () formed in an upper layer of the semiconductor layer (); and a clock signal line () formed in an upper layer of the capacitor electrode (), the capacitor electrode () being connected to a gate electrode of each of the transistors, the clock signal line () being supplied with a clock signal (CK) from outside the semiconductor device (), the capacitors (Caand Cb) each being formed in an overlap section where the semiconductor layer (), the gate insulating film () and the capacitor electrode () overlap one another, the overlap section and the clock signal line () overlapping each other when viewed from above.