The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Oct. 28, 2011
Oxidation annealing device and method for fabricating thin film transistor using oxidation annealing
Yoshifumi Ota, Osaka, JP;
Masato Hashimoto, Osaka, JP;
Yoshifumi Ota, Osaka, JP;
Masato Hashimoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A far-infrared plane heateris placed in a closed-container-shaped device bodyof an oxidation annealing device, an oxygen addition gas feed pipethrough which an oxygen addition gas containing water vapor and oxygen is fed into the device bodyis connected to a gas exhaust pipethrough which gas in the device bodyis discharged, and jet nozzlesthrough which the oxygen addition gas containing water vapor and oxygen is ejected to an oxygen-deficient portion of a substrateare brought into communication with the oxygen addition gas feed pipe. This allows oxidation annealing of a large substrate at high throughput and low cost while preventing a leakage current.