The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Jun. 09, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Junya Matsunami, Yokkaichi, JP;

Masayuki Ichige, Yokkaichi, JP;

Takuya Konno, Yokkaichi, JP;

Kikuko Sugimae, Kuwana, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 27/2481 (2013.01); H01L 45/085 (2013.01); G11C 13/0011 (2013.01);
Abstract

A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction, and a lower end of the second interconnection being located above the first interconnection; a plurality of third interconnections extending in a third direction, and the third interconnections being arranged in the second direction; a current limitation layer provided between the second interconnection and the third interconnections; a metal ion source layer provided between the current limitation layer and the third interconnections; a resistance change layer provided between the current limitation layer and the third interconnections; and a selector provided between the first interconnection and the lower end of the second interconnection.


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