The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Feb. 19, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Joon-seok Park, Seongnam-si, KR;
Sun-jae Kim, Seoul, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Seok-jun Seo, Anyang-si, KR;
Jong-baek Seon, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/66969 (2013.01);
Abstract
A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.