The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Oct. 10, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Hiroyuki Kanaya, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/16 (2013.01); H01L 43/12 (2013.01);
Abstract
An aspect of the present embodiment, there is provided magnetic random access memory device including a semiconductor substrate, a selection transistor on the semiconductor substrate, the selection transistor including a diffusion layer, a contact plug on diffusion layer, an amorphous film on the contact plug, a lower electrode provided on the amorphous film, a first magnetic layer, a nonmagnetic layer, a second magnetic layer, an upper electrode stacked in an order and a sidewall contact film on the contact plug, the sidewall contact film being in contact with a sidewall of the upper electrode.