The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Sep. 05, 2014
Sharp Kabushiki Kaisha, Osaka, JP;
Yoshifumi Ohta, Osaka, JP;
Go Mori, Osaka, JP;
Hirohiko Nishiki, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Tetsuya Aita, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Michiko Takei, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Takeshi Hara, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.