The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 28, 2014
Applicants:
Sunghae Lee, Suwon-si, KR;
Dongkyum Kim, Suwon-si, KR;
Joonsuk Lee, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28273 (2013.01); H01L 27/1157 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01);
Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device may include forming a structure including insulating layers and gate layers that are alternately and repeatedly stacked on a substrate. The method may include forming through-holes in the structure. The method may include forming first patterns on sidewalls of the gate layers, by performing an oxidation process. The method may include forming second patterns on portions of the substrate, by performing the oxidation process. The method may include removing the second patterns. Moreover, the method may include forming semiconductor patterns in the through-holes.