The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Jul. 10, 2012
Applicants:

Mamoru Nishizaki, Tokyo, JP;

Ken Ota, Tokyo, JP;

Inventors:

Mamoru Nishizaki, Tokyo, JP;

Ken Ota, Tokyo, JP;

Assignee:

PS4 LUXCO S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/105 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1052 (2013.01); H01L 23/5223 (2013.01); H01L 27/0207 (2013.01); H01L 27/10817 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 28/91 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device has at least a first capacitor and a second capacitor. First electrodes of the first and second capacitors are connected in common, a first voltage (½ VPERI) is applied to the first electrodes, a second voltage (for example, VPERI) that is different from the first voltage is applied to either one of the second electrodes, and the first voltage is applied to the other second electrode. A capacitor which constitutes a dummy capacitance is provided by applying one of the second electrodes of the first and second capacitors with the same voltage as the voltage applied to their first electrodes, whereby making it possible to increase the area of the compensation capacitance in the semiconductor device without changing a specified capacitance value.


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