The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Nov. 01, 2013
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
The present invention relates to the manufacture of CMOS semiconductor device. This invention includes: Step S, a layer of silicon oxide is deposited covering the surface of the polysilicon gates and the exposed upper surface of the silicon substrate, the silicon oxide layer is removed on the upper surface of the exposed silicon substrate, and then the barrier layer is formed at the surface of the polysilicon gates; Step S, the ions are implanted into the exposed substrate, and then several doped silicon regions are formed in the silicon substrate; Step S, the doped silicon regions are etched to form the trench of U-shape, then the barrier layer is removed. The present invention protects the polysilicon gate and the substrate during the process of forming the trench. The rate of etching is increased and the productivity is improved and it is possible to control the depth of the U-shaped trench.