The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Nov. 23, 2011
Chantal Arena, Mesa, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Cornville, AZ (US);
Subhash Mahajan, El Macero, CA (US);
Ilsu Han, Tempe, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Cornville, AZ (US);
Subhash Mahajan, El Macero, CA (US);
Ilsu Han, Tempe, AZ (US);
SOITEC, Bernin, FR;
Arizona Board of Regents For and On Behalf Arizona State University, Scottsdale, AZ (US);
Abstract
Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semi-conductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.