The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Dec. 06, 2007
Applicants:

Eric D. Stern, Cambridge, MA (US);

Tarek M. Fahmy, New Haven, CT (US);

Mark A. Reed, Monroe, CT (US);

James F. Klemic, Falls Church, VA (US);

Inventors:

Eric D. Stern, Cambridge, MA (US);

Tarek M. Fahmy, New Haven, CT (US);

Mark A. Reed, Monroe, CT (US);

James F. Klemic, Falls Church, VA (US);

Assignee:

Yale University, New Haven, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); B82Y 10/00 (2013.01); G01N 27/4146 (2013.01); H01L 29/045 (2013.01); H01L 29/0673 (2013.01); H01L 29/16 (2013.01);
Abstract

The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (L) of the semiconductor material of which the semiconductor layer is formed.


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