The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Oct. 05, 2011
Applicant:

Ivan E. Sutherland, Portland, OR (US);

Inventor:

Ivan E. Sutherland, Portland, OR (US);

Assignee:

ORACLE INTERNATIONAL CORPORATION, Redwood Shores, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/00 (2006.01); H01L 23/58 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01); G01B 7/14 (2006.01); G01B 7/30 (2006.01); G01B 7/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); G01B 7/14 (2013.01); G01B 7/30 (2013.01); G01B 7/023 (2013.01); H01L 23/48 (2013.01); H01L 24/16 (2013.01); H01L 2224/81121 (2013.01); H01L 2225/06531 (2013.01); H01L 2225/06593 (2013.01);
Abstract

A semiconductor die is described. This semiconductor die includes a driver, and a spatial alignment transducer that is electrically coupled to the driver and which is proximate to a surface of the semiconductor die. The driver establishes a spatially varying electric charge distribution in at least one direction in the spatial alignment transducer, thereby facilitating determination of a vertical spacing between a surface of the semiconductor die and a surface of another semiconductor die. In particular, a spatial alignment sensor proximate to the surface of the other semiconductor die may detect an electrical field (or an associated electrostatic potential) associated with the spatially varying electric charge distribution. This detected electric field may allow the vertical spacing between the surfaces of the semiconductor dies to be determined.


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