The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Mar. 12, 2013
Applicant:
Tdk Corporation, Chuo-ku, Tokyo, JP;
Inventors:
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H01G 4/005 (2006.01); H01G 4/228 (2006.01); H01G 4/33 (2006.01); H01G 4/38 (2006.01); H01G 4/232 (2006.01);
U.S. Cl.
CPC ...
H01G 4/306 (2013.01); H01G 4/33 (2013.01); H01G 4/38 (2013.01); H01G 4/232 (2013.01);
Abstract
A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.