The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jul. 08, 2013
Globalfoundries Inc., Grand Cayman, KY;
Torsten Schaefer, Pulsnitz, DE;
Dirk Fimmel, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A device includes a substrate and a dual port static random access memory cell. The substrate includes an N-well region, a first P-well region and a second P-well region. The first and second P-well regions are arranged on opposite sides of the N-well region and spaced apart along a width direction. The static random access memory cell includes first and second pull-up transistors that are provided in the N-well region, a first pair of pull-down transistors and a first pair of access transistors provided in the first P-well region, and a second pair of pull-down transistors and a second pair of access transistors provided in the second P-well region. Each of the first pair and the second pair of pull-down transistors includes a first pull-down transistor and a second pull-down transistor. Active regions of the first pull-down transistor and the second pull-down transistor are spaced apart along the width direction.