The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Nov. 12, 2013
Applicants:
Dong Hyun Sohn, Hwaseong-si, KR;
Chan Kyung Kim, Hwaseong-si, KR;
Yun Sang Lee, Yongin-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/14 (2006.01); G11C 11/36 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1697 (2013.01);
Abstract
A magneto-resistive random access memory (MRAM) including an MRAM cell array having an MRAM cell, and a control and voltage generation unit configured to generate a back bias voltage for the MRAM cell. The control and voltage generation unit including a command decoder configured to generate a decoding signal in response to a command output from a memory controller, and a voltage controller and generator configured to generate the back bias voltage with a magnitude based on the decoding signal and a reset signal output from the memory controller.