The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Sep. 09, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Yuui Shimizu, Kawasaki, JP;
Satoshi Inoue, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A semiconductor memory device comprises a first-supplied-voltage-supplying pad, a second-supplied-voltage-supplying pad, a data input/output pad, a memory body, a buffer circuit and an impedance-controlling circuit. A first supplied voltage is supplied to the memory body. A second supplied voltage is supplied to the buffer circuit. The impedance-controlling circuit controls an impedance of the buffer circuit on a side connected to the data input/output pad. The semiconductor memory device comprises a voltage-generating circuit generating a first inner voltage. The impedance-controlling circuit comprises a first P-channel transistor. A source terminal of the first P-channel transistor is connected to the first-supplied-voltage-supplying pad, and the first inner voltage generated from the voltage-generating circuit is selectively supplied to a gate terminal of the first P-channel transistor.