The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Nov. 22, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taehyun Kim, Seongnam-si, KR;

Youngcho Kim, Seoul, KR;

Youngsun Min, Hwaseong-si, KR;

Sungwhan Seo, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 5/145 (2013.01); G11C 16/06 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.


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