The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Jan. 22, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsutomu Ogihara, Jyoetsu, JP;

Takafumi Ueda, Jyoetsu, JP;

Yoshinori Taneda, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/36 (2006.01); G03F 7/40 (2006.01); H01L 21/302 (2006.01); C07F 7/18 (2006.01); C09D 183/06 (2006.01); C08G 77/14 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); G03F 7/0757 (2013.01); H01L 21/302 (2013.01); G03F 7/0751 (2013.01); G03F 7/11 (2013.01); G03F 7/36 (2013.01); G03F 7/40 (2013.01); C07F 7/1836 (2013.01); C09D 183/06 (2013.01); G03F 7/094 (2013.01); C07F 7/184 (2013.01); C08G 77/14 (2013.01);
Abstract

The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C). The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.


Find Patent Forward Citations

Loading…