The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Mar. 24, 2014
Applicant:
Mark J. Hagmann, Salt Lake City, UT (US);
Inventor:
Mark J. Hagmann, Salt Lake City, UT (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01Q 30/20 (2010.01); G01Q 60/16 (2010.01); G01Q 60/10 (2010.01); G01Q 60/00 (2010.01);
U.S. Cl.
CPC ...
G01Q 30/20 (2013.01); G01Q 60/16 (2013.01); G01Q 60/10 (2013.01); G01Q 60/00 (2013.01);
Abstract
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.