The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Oct. 30, 2012
Freescale Semiconductor, Inc., Austin, TX (US);
Ricardo Pureza Coimbra, Campinas, BR;
Edevaldo Pereira da Silva, Jr., Campinas, BR;
Pedro B. Zanetta, Campinas, BR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A die temperature measurement system () includes an external test environment setup () and an integrated circuit (). The external test environment setup () includes means to force and accurately measure electrical variables. The integrated circuit () includes a bipolar transistor (); a selectable switch () for selecting from plurality of integrated resistances () to be coupled in series between a base () of the bipolar transistor and a first input (); and a selectable-gain current mirror () with a gain, a programmable current-mirror output coupled to the collector () of the bipolar transistor. The bipolar transistor and optional diodes () are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation () of this data. Parasitic resistance and I/O pad leakage effects are canceled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile