The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Feb. 25, 2011
Masataka Hasegawa, Tsukuba, JP;
Masatou Ishihara, Tsukuba, JP;
Yoshinori Koga, Tsukuba, JP;
Jaeho Kim, Tsukuba, JP;
Kazuo Tsugawa, Tsukuba, JP;
Sumio Iijima, Tsukuba, JP;
Masataka Hasegawa, Tsukuba, JP;
Masatou Ishihara, Tsukuba, JP;
Yoshinori Koga, Tsukuba, JP;
Jaeho Kim, Tsukuba, JP;
Kazuo Tsugawa, Tsukuba, JP;
Sumio Iijima, Tsukuba, JP;
Abstract
Small crystal size is the issue of a conventional method for formation of a film of graphene by a thermal CVD technique using a copper foil as a substrate. A carbon film laminate is described in which graphene having a larger crystal size is formed. The carbon film laminate is configured to include a sapphire single crystal having a surface composed of terrace surfaces which are flat at the atomic level, and atomic-layer steps, a copper single crystal thin film formed by epitaxial growth on the substrate, and graphene deposited on the copper single crystal thin film, and thus enabling formation of graphene having a large crystal size.