The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Nov. 08, 2012
Applicant:

Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;

Inventors:

Shuya Suenaga, Kanagawa, JP;

Yasushi Miki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 37/00 (2006.01); B32B 33/00 (2006.01); B05D 3/02 (2006.01); B32B 27/00 (2006.01); B32B 37/24 (2006.01);
U.S. Cl.
CPC ...
B32B 33/00 (2013.01); B32B 2037/243 (2013.01); B32B 2307/306 (2013.01); B32B 2307/412 (2013.01); B32B 2307/7242 (2013.01); B32B 2379/08 (2013.01); B05D 3/0254 (2013.01); B05D 2505/50 (2013.01); B32B 27/00 (2013.01);
Abstract

The present invention provides a process for producing a transparent heat-resistant gas-barrier film capable of exhibiting a good gas-barrier property and maintaining good properties even after heat-treated at a temperature of 250° C. or higher, in a simple manner at low costs without need of a large size facility and a number of steps. The process for producing a transparent heat-resistant gas-barrier film according to the present invention includes the steps of coating a polysilazane-containing solution onto at least one surface of a transparent polyimide film formed of a polyimide containing a specific repeated unit; and calcining the coated solution at a temperature of 180° C. or higher to laminate a silicon oxide layer obtained by the calcination on the transparent polyimide film.


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