The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
May. 19, 2011
Nobuyuki Kamihara, Tokyo, JP;
Yuichiro Kamino, Tokyo, JP;
Tooru Hashigami, Tokyo, JP;
Hiroki Makimura, Tokyo, JP;
Koki Higashide, Tokyo, JP;
Masaki Kitaoka, Hyogo, JP;
Naotatsu Ishimaru, Hyogo, JP;
Nobuyuki Kamihara, Tokyo, JP;
Yuichiro Kamino, Tokyo, JP;
Tooru Hashigami, Tokyo, JP;
Hiroki Makimura, Tokyo, JP;
Koki Higashide, Tokyo, JP;
Masaki Kitaoka, Hyogo, JP;
Naotatsu Ishimaru, Hyogo, JP;
MITSUBISHI HEAVY INDUSTRIES, LTD., Tokyo, JP;
OTOWA ELECTRIC CO., LTD., Osaka, JP;
Abstract
Even when a large-current, high-voltage load is applied, damage is prevented. A current generating device () supplies a current simulating a current flowing when lightning occurs to a test piece () subjected to a lightning resistance test using power supplied from a power supply device (). The current generating device () includes electric double-layer capacitors that store and discharge power supplied from the power supply device (), a semiconductor switch () that switches between supplying and not supplying the power stored in the electric double-layer capacitors to the test piece (), and a protection unit () that is connected between the semiconductor switch () and the test piece () and that cuts the connection between the semiconductor switch () and the test piece () when a current larger than a predetermined value flows through the semiconductor switch ().