The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9070868 B1

Expired

Date of Patent:

Jun. 30, 2015

Filed:

Jun. 04, 2013

Thermally assisted mram with a multilayer encapsulant for low thermal conductivity

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony J. Annuziata, Stamford, CT (US);

Michael C. Gaidis, Wappingers Falls, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Tan N Tran

Int. Cl.

CPC ...

H01L 29/82 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);

U.S. Cl.

CPC ...

H01L 43/12 (2013.01); H01L 43/02 (2013.01);

Abstract

A technique is provided for a thermally assisted magnetoresistive random access memory device. A magnetic tunnel junction is formed. Contact wiring having a top contact electrode and a bottom contact electrode is formed. The contact wiring provides write bias to heat the magnetic tunnel junction. A multilayer dielectric encapsulant is configured to retain the heat within the magnetic tunnel junction.

Find Patent Forward Citations

Annuziata, Anthony. (2015). Thermally assisted mram with a multilayer encapsulant for low thermal conductivity (U.S. Patent No. 9070868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9070868

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