The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Feb. 08, 2012
Tao Wang, Bents Green, GB;
Tao Wang, Bents Green, GB;
Seren Photonics Limited, Bridgend, GB;
Abstract
A method () of making a semiconductor device, for example a light emitting diode. The method () includes providing () a semiconductor wafer, and providing () a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer () over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials () provided over the selectively etched semiconductor wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile