The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Sep. 25, 2013
Applicant:
Sanyo Electric Co., Ltd., Osaka, JP;
Inventors:
Yutaka Kirihata, Kaizuka, JP;
Taiki Hashiguchi, Kaizuka, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/20 (2006.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/0352 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/20 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); H01L 31/03529 (2013.01); H01L 31/0682 (2013.01); H01L 31/202 (2013.01); Y02E 10/547 (2013.01);
Abstract
The method disclosed herein includes a first step of forming an i-type amorphous silicon layerand an n-type amorphous silicon layeron a light-receiving surface of an n-type monocrystalline silicon substrate; a second step of forming an i-type amorphous silicon layerand an n-type amorphous silicon layeron a backside surface of the n-type monocrystalline silicon substrate; and a third step of forming, after completion of the first step and the second step, an antireflection layeron the n-type amorphous silicon layer, and subsequently forming an insulating layeron the n-type amorphous silicon layer