The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jun. 26, 2012
Applicants:
Mayuko Fudeta, Osaka, JP;
Satoshi Komada, Osaka, JP;
Ryu Kaihara, Osaka, JP;
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/06 (2006.01); H01L 31/072 (2012.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/32 (2013.01);
Abstract
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.