The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Dec. 18, 2012
Chan-long Shieh, Paradise Valley, AZ (US);
Fatt Foong, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
Gang Yu, Santa Barbara, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Fatt Foong, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
Gang Yu, Santa Barbara, CA (US);
CBRITE Inc., Goleta, CA (US);
Abstract
A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.