The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Feb. 06, 2013
Infineon Technologies Ag, Neubiberg, DE;
Adrian Finney, Villach, AT;
Andrew Wood, St.Jakob im Rosental, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes an epitaxial layer of semiconductor material of a first conductivity type, a body region of a second (opposite) conductivity type extending into the epitaxial layer from a main surface of the epitaxial layer, a source region of the first conductivity type disposed in the body region, and a channel region extending laterally in the body region from the source region along the main surface. A charge compensation region of the second conductivity type can be provided under the body region which extends in a direction parallel to the main surface and terminates prior to a pn-junction between the source and body regions at the main surface, and/or an additional region of the first conductivity type which has at least one peak doping concentration each of which occurs deeper in the epitaxial layer from the main surface than a peak doping concentration of the device channel region.