The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jul. 02, 2013
Cambridge Microelectronics Ltd., Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Nishad Udugampola, Cambridge, GB;
Tanya Trajkovic, Cambridge, GB;
Cambridge Microelectronics Ltd., Cambridge, GB;
Abstract
The invention generally relates to a lateral power semiconductor transistor for example in integrated circuits. In particular the invention relates to Lateral Insulated Gate Bipolar Transistors or other lateral bipolar devices such as PIN diodes. The invention also generally relates to a method of increasing switching speed of a lateral bipolar power semiconductor transistor. There is provided a lateral bipolar power semiconductor transistor comprising a first floating semiconductor region of the first conductivity type located laterally spaced to an anode/drain region and a second floating semiconductor region of the second conductivity type located laterally adjacent the first floating semiconductor region, and a floating electrode placed above and in direct contact to the first and second floating semiconductor regions.