The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Dec. 17, 2013
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Angelo Magri′, Belpasso, IT;

Francesco Lizio, Catania, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 23/00 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 29/4238 (2013.01); H01L 27/0207 (2013.01); H01L 29/0696 (2013.01); H01L 21/28008 (2013.01); H01L 21/82 (2013.01); H01L 29/7827 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01);
Abstract

A method for integrating a set of electronic devices on a wafer () of semiconductor material having a main surface includes forming a plurality of trenches extending into the wafer from the main surface. At least one layer of electrically insulating material is formed within each trench. At least one layer of electrically conductive material is formed within each trench superimposed on the at least one layer of insulating material. The formation of the plurality of trenches includes forming the trenches partitioned into sub-sets of trenches. The trenches of a first sub-set are oriented along a first common direction that is different from the orientation of the trenches of a second sub-set.


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