The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jul. 31, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Toshiyuki Takewaki, Kawasaki, JP;
Hironobu Miyamoto, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 27/088 (2013.01); H01L 29/80 (2013.01); H01L 29/66477 (2013.01);
Abstract
The reliability of a power MISFET made of a nitride semiconductor material is improved. A strain relaxation film is disposed between a polyimide film and a gate electrode, to suppress a stress exerted on an electron supply layer and a channel layer from the polyimide film, and suppress a stress strain generated in the electron supply layer and the channel layer. As a result, a change in channel electron concentration in the channel layer is suppressed to prevent a threshold voltage or an on-resistance of the power MISFET from fluctuating.