The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jan. 31, 2012
Hiromitsu Katsui, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Wataru Nakamura, Osaka, JP;
Tetsunori Tanaka, Osaka, JP;
Kenichi Kitoh, Osaka, JP;
Hiromitsu Katsui, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Wataru Nakamura, Osaka, JP;
Tetsunori Tanaka, Osaka, JP;
Kenichi Kitoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A drain electrode () includes (i) a lower drain electrode () stacked on a semiconductor layer () so as to partially cover an upper surface of the semiconductor layer () and (ii) an upper drain electrode (). The semiconductor layer (), the lower drain electrode (), and the upper drain electrode () form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode () and a periphery of the upper drain electrode () is more than 0.4 μm but less than 1.5 μm.