The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Apr. 27, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Kobe Steel, Ltd., Kobe-shi, Hyogo, JP;
Byung-Du Ahn, Hwaseong-si, KR;
Gun-Hee Kim, Hwaseong-si, KR;
Jun-Hyung Lim, Seoul, KR;
Toshihiro Kugimiya, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
SAMSUNG DISPLAY CO., LTD., , KR;
KOBE STEEL, LTD., , JP;
Abstract
A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile