The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Sep. 24, 2014
Hitachi Kokusai Electric Inc., Tokyo, JP;
Kazuyuki Toyoda, Toyama, JP;
Yukitomo Hirochi, Toyama, JP;
Tetsuo Yamamoto, Toyama, JP;
Kazuhiro Morimitsu, Toyama, JP;
Tadashi Takasaki, Toyama, JP;
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.