The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

May. 30, 2012
Applicants:

Mann Ho Cho, Seoul, KR;

Ju Heyuck Baeck, Seoul, KR;

Tae Hyeon Kim, Seoul, KR;

Hye Jin Choi, Bucheon-si, KR;

Inventors:

Mann Ho Cho, Seoul, KR;

Ju Heyuck Baeck, Seoul, KR;

Tae Hyeon Kim, Seoul, KR;

Hye Jin Choi, Bucheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/1625 (2013.01); H01L 45/1683 (2013.01); H01L 45/065 (2013.01);
Abstract

A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbSematerial layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbSematerial layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.


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