The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Sep. 06, 2012
Mihail Jefremow, Augsburg, DE;
Wolf Allers, Munich, DE;
Jan Otterstedt, Unterhaching, DE;
Christian Peters, Vaterstetten, DE;
Thomas Kern, Munich, DE;
Mihail Jefremow, Augsburg, DE;
Wolf Allers, Munich, DE;
Jan Otterstedt, Unterhaching, DE;
Christian Peters, Vaterstetten, DE;
Thomas Kern, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a method for reading a memory cell includes combining a cell current from a memory cell with a reference current from a reference source to create an average current, enabling the average current to flow through a first mirror transistor in a sense path and a second mirror transistor in a reference path, storing the current mismatch on a capacitor coupled to the gates of the first mirror transistor and the second mirror transistor, disconnecting the memory cell from the reference path and disconnecting the reference source from the sense path, enabling the cell current only to flow through the sense path, and determining the output level of the memory cell.