The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Aug. 16, 2012
Applicants:

Jong-pil Son, Seongnam-si, KR;

Chul-woo Park, Yongin-si, KR;

Hong-sun Hwang, Suwon-si, KR;

Hyun-ho Choi, Suwon-si, KR;

Inventors:

Jong-Pil Son, Seongnam-si, KR;

Chul-Woo Park, Yongin-si, KR;

Hong-Sun Hwang, Suwon-si, KR;

Hyun-Ho Choi, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonngi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01);
Abstract

An anti-fuse circuit includes an array of anti-fuses. Each anti-fuse has a tunneling magneto-resistance (TMR) element series connected with a transistor, such that breakdown of a magnetic tunnel junction (MTJ) in response to an applied first voltage stores fuse information. A sensing circuit senses and amplifies respective output signals provided by the anti-fuses.


Find Patent Forward Citations

Son, Jong-Pil. (2015). Anti-fuse circuit using mtj breakdown and semiconductor device including same (U.S. Patent No. 9070465). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9070465

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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