The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Dec. 21, 2011
Applicant:
Dong Chen, Tucson, AZ (US);
Inventor:
Dong Chen, Tucson, AZ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01); G01R 27/00 (2006.01); G01R 31/26 (2014.01); H05B 31/00 (2006.01); F21V 8/00 (2006.01); F21Y 103/00 (2006.01); G01R 31/265 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2648 (2013.01); F21V 2008/00 (2013.01); H05B 2206/00 (2013.01); H05B 31/00 (2013.01); F21Y 2103/00 (2013.01); G01R 31/2656 (2013.01);
Abstract
A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-V) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model.