The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Feb. 04, 2011
Applicants:
Tzu-ching Yang, Hsinchu, TW;
Chung-ying Chang, Hsinchu, TW;
Inventors:
Tzu-Ching Yang, Hsinchu, TW;
Chung-Ying Chang, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/458 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4586 (2013.01); C23C 16/4585 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01);
Abstract
Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.