The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Oct. 24, 2011
Applicants:
Shiro Tsukamoto, Ibaraki, JP;
Nobuhito Makino, Ibaraki, JP;
Hideaki Fukuyo, Ibaraki, JP;
Inventors:
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); C23C 14/34 (2006.01); C22C 14/00 (2006.01); C22F 1/18 (2006.01); C22C 1/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C22C 14/00 (2013.01); C23C 14/3414 (2013.01); C22F 1/183 (2013.01); C22C 1/02 (2013.01);
Abstract
Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.