The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Jul. 20, 2012
Applicants:

Brian Elliott Hayden, Chilworth Southampton, GB;

Christopher Edward Lee, Chilworth Southampton, GB;

Duncan Clifford Alan Smith, Chilworth Southampton, GB;

Mark Stephen Beal, Chilworth Southampton, GB;

Xiaojuan LU, Chilworth Southampton, GB;

Chihiro Yada, Aichi, JP;

Inventors:

Brian Elliott Hayden, Chilworth Southampton, GB;

Christopher Edward Lee, Chilworth Southampton, GB;

Duncan Clifford Alan Smith, Chilworth Southampton, GB;

Mark Stephen Beal, Chilworth Southampton, GB;

Xiaojuan Lu, Chilworth Southampton, GB;

Chihiro Yada, Aichi, JP;

Assignees:

Ilika Technologies Ltd., Chilworth, Southampton, GB;

Toyota Motor Corporation, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 16/513 (2006.01); C01B 25/30 (2006.01); C23C 14/24 (2006.01); C30B 23/06 (2006.01); C30B 23/08 (2006.01); H01M 4/58 (2010.01); H01M 4/04 (2006.01); H01M 4/136 (2010.01); H01M 4/1397 (2010.01); C23C 14/08 (2006.01); C01B 21/20 (2006.01); C01B 25/45 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
C01B 25/30 (2013.01); C23C 14/24 (2013.01); C30B 23/066 (2013.01); C30B 23/08 (2013.01); H01M 4/5825 (2013.01); H01M 4/0428 (2013.01); H01M 4/136 (2013.01); H01M 4/1397 (2013.01); H01M 10/0525 (2013.01); C23C 14/08 (2013.01); H01M 4/0421 (2013.01); Y02E 60/122 (2013.01); C01B 21/203 (2013.01); C01B 25/45 (2013.01);
Abstract

A vapor deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapor, and co-depositing the component element vapors on a common substrate, wherein: the vapor of at least one component element is provided using a cracking source; the vapor of at least one other component element is provided using a plasma source; and at least one further component element vapor is provided; wherein the component elements react on the substrate to form the chemical compound.


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