The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2015

Filed:

Oct. 24, 2012
Applicant:

Arizona Board of Regents, a Body Corporate of the State of Arizona Acting for and on Behalf of Arizona State University, Scottsdale, AZ (US);

Inventors:

Jemmy Sutanto, Scottsdale, AZ (US);

Jitendran Muthuswamy, Chandler, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 7/00 (2006.01); B23K 1/20 (2006.01); B05D 5/10 (2006.01); B23K 1/00 (2006.01); B23K 1/008 (2006.01); B23K 3/06 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
B23K 1/20 (2013.01); H05K 7/00 (2013.01); B23K 1/0008 (2013.01); B23K 1/008 (2013.01); B23K 3/0607 (2013.01); B23K 3/0638 (2013.01); B23K 2201/42 (2013.01); H01L 2224/14155 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 2224/1131 (2013.01); H01L 2224/13339 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/1329 (2013.01); H01L 2924/10253 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/1461 (2013.01);
Abstract

Interconnect and/or reflow methods of the present disclosure achieve high aspect ratio interconnects, for example interconnects having an aspect ratio as high as 4, in addition to wider interconnect height tolerances among interconnects (for example, interconnects having a height variability of up to about 30%) while still achieving reliable electrical connections. Moreover, flip-chip interconnects configured in accordance with principles of the present disclosure can provide improved z-axis spacing between die-to-die and/or die-to-substrate flip chip stacks, for example z-axis spacing as large as 600 μm. In this manner, additional spacing can be achieved for MEMS devices and/or similar components that are extendable and/or deformable out of the die plane.


Find Patent Forward Citations

Loading…