The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jan. 16, 2013
Anand Kumar Sinha, Noida, IN;
Sanjay K. Wadhwa, Noida, IN;
Anand Kumar Sinha, Noida, IN;
Sanjay K. Wadhwa, Noida, IN;
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
A capacitor charging circuit has input, output and control nodes, first and second series connected primary FETs, and first and second leakage current reduction FETs. All of the FETs have their gates coupled to the control node. The first primary FET is coupled between the input and output nodes, and the second primary FET is coupled between the output node and a leakage current reduction node. The first leakage current reduction FET is coupled between a supply line and the leakage current reduction node, and the second leakage current reduction FET is coupled between the leakage current reduction node and ground. When a control signal at the control node is low, the first primary FET and the first leakage current reduction FET are conductive, and the second primary FET and the second leakage current reduction FET are non-conductive, which eliminates sub-threshold leakage current flowing through the second primary FET.