The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Apr. 07, 2014
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, Gyunggi-do, KR;

Inventor:

Tsuyoshi Sugiura, Yokohama, JP;

Assignee:

Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01); H03K 3/01 (2006.01); H04B 1/28 (2006.01); H01P 1/15 (2006.01); H03K 17/693 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01P 1/15 (2013.01); H03K 17/693 (2013.01); H01L 27/0629 (2013.01); H01L 27/1203 (2013.01);
Abstract

There is provided a high frequency switch which is satisfactory in terms of both insertion loss characteristics and harmonic characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units includes a plurality of series-connected MOSFETs formed on a silicon substrate, the plurality of MOSFETs are any one of body contact-type FETs and floating body-type FETs, and each of the switching units includes both of the body contact-type FETs and the floating body-type FETs.


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