The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Jan. 28, 2013
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagwa, JP;

Inventors:

Eiji Kariyada, Kanagawa, JP;

Katsumi Suemitsu, Kanagwa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/72 (2006.01); H01L 43/10 (2006.01); H01L 43/14 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 43/14 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer.


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